INFLUENCE OF THE GROWTH-PARAMETERS IN GAAS VAPOR-PHASE EPITAXY

The growth of gallium arsenide by vapor phase deposition according to the arsenic trichloride transport method has been studied by measurement of the growth rate as a function of the principal growth parameters, which were varied within a wide range. The experimental part consists of a study of (i) the influence of the supersaturation at the source, of the deposition temperature, and of the input partial pressure of arsenic trichloride, (ii) the investigation of the (110) plane and vicinal planes as possible growth planes, (iii) the anisotropy in vapor phase growth corresponding to unusual growth conditions, namely low temperature and high partial pressure of arsenic trichloride. An attempt was made to interpret the experimental results in accordance with the theoretical model of R. and M. Cadoret.