共 50 条
- [31] SOME CONDITIONS FOR STRONG ASYMMETRIC DOUBLE INJECTION IN INSULATORS AND SEMICONDUCTORS ELECTRICAL ENGINEERING, 1995, 78 (02): : 111 - 116
- [32] UNIVERSAL DIAGRAM OF THE CHARACTERISTIC PARAMETERS OF CARRIER TRAPPING CENTERS AND OF THE CORRESPONDING THERMOSTIMULATED SPECTRA IN SEMICONDUCTORS AND INSULATORS FIZIKA TVERDOGO TELA, 1989, 31 (11): : 193 - 196
- [33] CITATION CLASSIC - DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS CURRENT CONTENTS/ENGINEERING TECHNOLOGY & APPLIED SCIENCES, 1981, (52): : 18 - 18
- [35] STEADY STATE CHARACTERISTICS OF DOUBLE INJECTION IN SEMICONDUCTORS WITH DEEP TRAP LEVELS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 378 - &
- [37] INVESTIGATION OF THE DEGREE OF OCCUPANCY OF DEEP CENTERS IN DOUBLE-INJECTION DIODES AT DIFFERENT INJECTION RATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 605 - 606