REGROWTH BEHAVIOR OF GE IMPLANTED (100) SI

被引：7
|
作者：
REVESZ, P [1 ]
MAYER, JW [1 ]
机构：
[1] CALTECH,PASADENA,CA 91125
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 54卷 / 02期
关键词：
D O I：
10.1002/pssa.2210540210
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：513 / 516
页数：4
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