VERY THIN SILICON EPITAXIAL LAYERS GROWN USING RAPID THERMAL VAPOR-PHASE EPITAXY

被引：10
作者：
CAMPBELL, SA
LEIGHTON, JD
CASE, GH
KNUTSON, KL
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期
关键词：
D O I：
10.1116/1.584554
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1080 / 1083
页数：4
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