PIEZORESISTIVE PROPERTIES OF ION-IMPLANTED LAYERS IN SILICON

被引：0
|
作者：
CHU, SF [1 ]
TOPICH, JA [1 ]
KO, WH [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C309 / C309
页数：1
相关论文
共 50 条
  • [41] LUMINESCENCE OF ION-IMPLANTED LAYERS IN ZNO
    PIERCE, BJ
    HENGEHOLD, RL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 376 - 376
  • [42] ATHERMAL EFFECTS IN ION-IMPLANTED LAYERS
    GYULAI, J
    RYSSEL, H
    BIRO, LP
    FREY, L
    KUKI, A
    KORMANY, T
    SERFOZO, G
    KHANH, NQ
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1994, 127 (3-4): : 397 - 404
  • [43] EPITAXIAL SILICON GROWTH ON ION-IMPLANTED SILICON
    SARASWAT, KC
    MEINDL, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C106 - C107
  • [44] ELLIPSOMETRIC SPECTRUM AND OPTICAL-PROPERTIES OF ION-IMPLANTED SILICON
    MO, D
    YE, XJ
    CHINESE PHYSICS, 1982, 2 (04): : 915 - 921
  • [45] ELECTRICAL AND PHOTOCONDUCTIVE PROPERTIES OF ION-IMPLANTED AMORPHOUS-SILICON
    LECOMBER, PG
    SPEAR, WE
    MULLER, G
    KALBITZER, S
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 327 - 332
  • [46] INFLUENCE OF SURFACE DISSOCIATION ON THE PROPERTIES OF ION-IMPLANTED P-TYPE LAYERS IN SILICON-CARBIDE
    GUDKOV, VA
    KRYSOV, GA
    MAKAROV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 105 - 106
  • [47] MECHANISM OF CURRENT FLOW IN AND PROPERTIES OF ION-IMPLANTED LAYERS OF SI3N4 ON SILICON
    ASTAKHOV, VP
    KARASHEV, TB
    ARANOVIC.RM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1826 - &
  • [48] The structure of ion-implanted amorphous silicon
    Gibson, JM
    Cheng, JY
    Voyles, P
    Treacy, MMJ
    Jacobson, DC
    MICROSTRUCTURAL PROCESSES IN IRRADIATED MATERIALS, 1999, 540 : 27 - 30
  • [49] HREM STUDIES OF ION-IMPLANTED SILICON
    VANLANDUYT, J
    DEVEIRMAN, A
    VANHELLEMONT, J
    BENDER, H
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1989, 1989, 100 : 1 - 10
  • [50] Raman spectroscopy of ion-implanted silicon
    Tuschel, DD
    Lavine, JP
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 143 - 148
12345