PIEZORESISTIVE PROPERTIES OF ION-IMPLANTED LAYERS IN SILICON

被引:0
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作者
CHU, SF [1 ]
TOPICH, JA [1 ]
KO, WH [1 ]
机构
[1] CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:C309 / C309
页数:1
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