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PIEZORESISTIVE PROPERTIES OF ION-IMPLANTED LAYERS IN SILICON
被引:0
|
作者
:
CHU, SF
论文数:
0
引用数:
0
h-index:
0
机构:
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
CHU, SF
[
1
]
TOPICH, JA
论文数:
0
引用数:
0
h-index:
0
机构:
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
TOPICH, JA
[
1
]
KO, WH
论文数:
0
引用数:
0
h-index:
0
机构:
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
KO, WH
[
1
]
机构
:
[1]
CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1977年
/ 124卷
/ 08期
关键词
:
D O I
:
暂无
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:C309 / C309
页数:1
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