PIEZORESISTIVE PROPERTIES OF ION-IMPLANTED LAYERS IN SILICON

被引：0
|
作者：
CHU, SF [1 ]
TOPICH, JA [1 ]
KO, WH [1 ]
机构：
[1] CASE WESTERN RESERVE UNIV,CTR ENGN DESIGN,CLEVELAND,OH 44106
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 08期
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D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C309 / C309
页数：1
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