SELECTIVE DEPOSITION OF INSITU DOPED POLYCRYSTALLINE SILICON BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：14

作者：

HSIEH, TY

CHUN, HG

KWONG, DL

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 23期

关键词：

D O I：

10.1063/1.102029

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2408 / 2410

页数：3

相关论文

共 7 条

[1]

Arienzo M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P220

[2] RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .2. THE SIH2CL2-H2-N2-HCL SYSTEM [J].

CLAASSEN, WAP ;

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) :807-815

[3]

COMFORT JH, 1987, 10TH P INT C CHEM VA, P265

[4] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].

FARROW, RFC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907

[5] LIMITED REACTION PROCESSING - SILICON EPITAXY [J].

GIBBONS, JF ;

GRONET, CM ;

WILLIAMS, KE .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :721-723

[6] SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION [J].

LEE, SK ;

KU, YH ;

KWONG, DL .

APPLIED PHYSICS LETTERS, 1989, 54 (18) :1775-1777

[7] A MODEL OF GROWTH-RATE NONUNIFORMITY IN THE SIMULTANEOUS DEPOSITION AND DOPING OF A POLYCRYSTALLINE SILICON FILM BY LPCVD [J].

YECKEL, A ;

MIDDLEMAN, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1275-1281