SELECTIVE DEPOSITION OF INSITU DOPED POLYCRYSTALLINE SILICON BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引:14
作者
HSIEH, TY
CHUN, HG
KWONG, DL
机构
关键词
D O I
10.1063/1.102029
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2408 / 2410
页数:3
相关论文
共 7 条
[1]  
Arienzo M., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P220
[2]   RATE-DETERMINING REACTIONS AND SURFACE SPECIES IN CVD OF SILICON .2. THE SIH2CL2-H2-N2-HCL SYSTEM [J].
CLAASSEN, WAP ;
BLOEM, J .
JOURNAL OF CRYSTAL GROWTH, 1980, 50 (04) :807-815
[3]  
COMFORT JH, 1987, 10TH P INT C CHEM VA, P265
[4]   KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J].
FARROW, RFC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :899-907
[5]   LIMITED REACTION PROCESSING - SILICON EPITAXY [J].
GIBBONS, JF ;
GRONET, CM ;
WILLIAMS, KE .
APPLIED PHYSICS LETTERS, 1985, 47 (07) :721-723
[6]   SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION [J].
LEE, SK ;
KU, YH ;
KWONG, DL .
APPLIED PHYSICS LETTERS, 1989, 54 (18) :1775-1777
[7]   A MODEL OF GROWTH-RATE NONUNIFORMITY IN THE SIMULTANEOUS DEPOSITION AND DOPING OF A POLYCRYSTALLINE SILICON FILM BY LPCVD [J].
YECKEL, A ;
MIDDLEMAN, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (05) :1275-1281