Influence of vapours and occluded gases on the electrical conductivity of cuprous oxide

被引:0
作者
Dubar, L
机构
来源
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES | 1935年 / 200卷
关键词
D O I
暂无
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
引用
收藏
页码:1923 / 1925
页数:3
相关论文
共 50 条
[11]   Electrical conductivity in dense metallic vapours [J].
Popielawski, J. .
CHEMICAL PHYSICS LETTERS, 1968, 2 (02) :71-73
[12]   SURFACE CONDUCTIVITY OF CUPROUS OXIDE [J].
LASHKAREV, VE ;
LIASHENKO, VI .
DOKLADY AKADEMII NAUK SSSR, 1956, 106 (02) :243-245
[13]   INFLUENCE OF OXYGEN PARTIAL PRESSURE ON NON-STOICHIOMETRY AND ELECTRICAL CONDUCTIVITY OF VANADIUM PENTOXIDE - CUPROUS OXIDE MELTS [J].
PASTUKHO.EA ;
ESIN, OA ;
VATOLIN, NA .
RUSSIAN JOURNAL OF PHYSICAL CHEMISTRY,USSR, 1969, 43 (03) :319-&
[14]   THE INFLUENCE OF INCOMBUSTIBLE VAPOURS ON THE LIMITS OF INFLAMMABILITY OF GASES AND VAPOURS IN AIR [J].
BURGOYNE, JH ;
WILLIAMSLEIR, G .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1948, 193 (1035) :525-539
[15]   EFFECT ON LUMINESCENCE AND ELECTRICAL CONDUCTIVITY OF CUPROUS OXIDE OF AN ELECTRIC FIELD APPLIED TO THE SURFACE [J].
PEKA, GP ;
KARKHANIN, YI .
SOVIET PHYSICS-SOLID STATE, 1963, 4 (12) :2646-2651
[16]   ELECTRICAL CONDUCTIVITY MEASUREMENTS ON CUPROUS HALIDES [J].
WAGNER, JB ;
WAGNER, C .
JOURNAL OF CHEMICAL PHYSICS, 1957, 26 (06) :1597-1601
[17]   ELECTRICAL-CONDUCTIVITY OF CUPROUS SELENIDE [J].
INGLIZYAN, PN ;
IORGA, TP ;
CHKHENKELI, NS .
INORGANIC MATERIALS, 1984, 20 (10) :1528-1530
[18]   On the Electrical Conductivity of Air and Salt Vapours. [J].
Wilson, Harold A. .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON, 1900, 68 (445) :228-230
[19]   The influence of the gases of the atmosphere on the electric conductivity of copper oxide [J].
Dubar, L .
COMPTES RENDUS HEBDOMADAIRES DES SEANCES DE L ACADEMIE DES SCIENCES, 1936, 203 :46-48
[20]   RESIDUAL CONDUCTIVITY OF CUPROUS-OXIDE [J].
PREDTECHENSKII, BS ;
GRECHUSHNIKOV, BN ;
STAROSTINA, LS .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (06) :718-719