PHOTOCAPACITANCE QUENCHING EFFECT FOR OXYGEN IN GAAS

被引：110

作者：

VINCENT, G ^{[1
]}

BOIS, D ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON, PHYS MAT LAB, 20 AVE ALBERT EINSTEIN, F-69621 VILLEURBANNE, FRANCE

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 27卷 / 04期

关键词：

D O I：

10.1016/0038-1098(78)90550-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：431 / 434

页数：4

共 13 条

[1]

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[7] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

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[8] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

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[9] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-O [J].

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[10]

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