COMPENSATING IMPURITY EFFECT ON EPITAXIAL REGROWTH RATE OF AMORPHIZED SI

被引：95

作者：

SUNI, I

GOLTZ, G

GRIMALDI, MG

NICOLET, MA

LAU, SS

机构：

[1] CALTECH,PASADENA,CA 91125

[2] UNIV CALIF SAN DIEGO,LA JOLLA,CA 92093

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 03期

关键词：

D O I：

10.1063/1.93034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：269 / 271

页数：3

共 14 条

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[8]

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[9] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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[10]

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