INFLUENCE OF HEAT-TREATMENT ON STRUCTURE AND PROPERTIES OF ELECTRODEPOSITED CDSE OR CD(TE, SE) SEMICONDUCTING COATINGS

被引：57

作者：

BOUROUSHIAN, M ^{[1
]}

LOIZOS, Z ^{[1
]}

SPYRELLIS, N ^{[1
]}

MAURIN, G ^{[1
]}

机构：

[1] CNRS,UPR 15,F-75252 PARIS 05,FRANCE

来源：

THIN SOLID FILMS | 1993年 / 229卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90415-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CdSe and mixed CdSe and CdTe semiconducting thin films, prepared by cathodic electrodeposition from an acid sulphate solution, containing selenium and tellurium oxides in various amounts, were submitted to a thermal treatment at temperatures ranging between 400 and 520-degrees-C. The crystal structure, composition, band-gap width and photoelectrochemical response of the annealed materials was investigated. It was found that all materials, rich in selenium, change their structure from cubic (zinc blende) to hexagonal (wurtzite), when annealed within the above mentioned region of temperatures. In many cases, an improvement of their semiconducting properties has been also confirmed.

引用

页码：101 / 106

页数：6

共 26 条

[1]

BATTACHARYA R, 1986, J APPL ELECTROCHEM, V16, P168

[2]

BOURDEAU RA, 1982, SOLAR ENERGY MATER, V7, P385

[3] PHOTOELECTROCHEMICAL CELL FOR SOLAR-ENERGY CONVERSION USING ELECTROCODEPOSITED CDSE FILMS [J].