PHOTOAVALANCHE EFFECTS IN A GAAS-MESFET

被引：0

作者：

MADJAR, A

HERCZFELD, PR

PAOLLELA, A

机构：

[1] Center for Microwave Lightwave Engineering, Drexel University, Philadelphia, Pennsylvania

[2] US Army, LABCOM Electronics Technology & Devices Laboratory, Ft. Monmouth, New Jersey

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1990年 / 3卷 / 02期

关键词：

Avalanche; MESFET; MMIC; photo‐detection;

D O I：

10.1002/mop.4650030206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a photomultiplication effect in microwave MESFETs that occurs when the device is operated close to the avalanche breakdown voltage of the drain‐gate Schottky barrier. The multiplication enhances the optical response of the device, which is important when the MESFET is used in a photodetection mode. However, caution is required when the device is operated at high Vds levels so that premature avalanche breakdown is avoided. Copyright © 1990 Wiley Periodicals, Inc., A Wiley Company

引用

页码：60 / 62

页数：3