LEAKAGE-CURRENT REDUCTION IN THIN TA2O5 FILMS FOR HIGH-DENSITY VLSI MEMORIES

被引：41

作者：

HASHIMOTO, C

OIKAWA, H

HONMA, N

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期

关键词：

D O I：

10.1109/16.21171

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：14 / 18

页数：5

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共 7 条

[1] AMAZAWA T, 1984, 16 C SOL STAT DEV MA, P269
[2] KATO T, 1983, S VLSI TECHNOLOGY, P86
[3] MINEGISHI K, 1903, IEDM, P319
[4] A SUBMICROMETER MEGABIT DRAM PROCESS TECHNOLOGY USING TRENCH CAPACITORS
NAKAJIMA, S
MINEGISHI, K
MIURA, K
MORIE, T
KIMIZUKA, M
MANO, T
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (01) : 130 - 136
[5] NISHIOKA Y, 1984, 165TH EL SOC M CINC, P190
[6] QUADRUPLY SELF-ALIGNED STACKED HIGH-CAPACITANCE RAM USING TA2O5 HIGH-DENSITY VLSI DYNAMIC MEMORY
OHTA, K
YAMADA, K
SHIMIZU, K
TARUI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (03) : 368 - 376
[7] ELLIPSOMETRIC INVESTIGATION OF CORROSION OF DEPOSITED THIN MOLYBDENUM FILM
OIKAWA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (05) : 629 - 635