LEAKAGE-CURRENT REDUCTION IN THIN TA2O5 FILMS FOR HIGH-DENSITY VLSI MEMORIES

被引：41
作者：
HASHIMOTO, C
OIKAWA, H
HONMA, N
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 01期
关键词：
D O I：
10.1109/16.21171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：14 / 18
页数：5
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