INVESTIGATION OF THE PARAMETERS OF PLATINUM LEVELS IN N-TYPE SI

被引:0
|
作者
LEBEDEV, AA
SOBOLEV, NA
URUNBAEV, BM
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1981年 / 15卷 / 08期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:880 / 882
页数:3
相关论文
共 50 条
  • [1] INVESTIGATION OF THE PARAMETERS OF IRON LEVELS IN N-TYPE SI BY CAPACITANCE METHODS
    VORONKOV, VB
    LEBEDEV, AA
    MAMADALIMOV, AT
    URUNBAEV, BM
    USMANOV, TA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1217 - 1219
  • [2] INVESTIGATION OF THE FUNDAMENTAL PARAMETERS GOVERNING THE PHONON-PHONON RELAXATION IN N-TYPE SI
    BARANSKII, PI
    SAVYAK, VV
    SHCHERBINA, LA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 231 - 233
  • [3] INVESTIGATION OF CLUSTERS OF COMPENSATING CENTERS IN N-TYPE SI
    VITMAN, RF
    VITOVSKII, NA
    LEBEDEV, AA
    MASHOVETS, TV
    NALBANDYAN, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1278 - 1280
  • [4] CHARACTERIZATION OF DEEP LEVELS IN N-TYPE SI EPITAXIAL LAYER
    TAKANO, Y
    FUMA, N
    NAKAMURA, N
    TASHIRO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10A): : L1245 - L1247
  • [5] Characterization of deep levels in n-type Si epitaxial layer
    Takano, Y.
    Fuma, N.
    Nakamura, N.
    Tashiro, K.
    Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (10 A):
  • [6] Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals
    Sato, S
    Ito, A
    Tada, S
    Tanaka, S
    Fukuyama, A
    Ikari, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5B): : 3376 - 3378
  • [7] Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals
    Sato, Shoichiro
    Ito, Atsushi
    Tada, Susumu
    Tanaka, Shuji
    Fukuyama, Atsuhiko
    Ikari, Tetsuo
    Sato, S. (sato@pem.miyazaki-u.ac.jp), 1600, Japan Society of Applied Physics (41): : 3376 - 3378
  • [8] Effects of Si Interlayer on Nickel and Platinum Ohmic Contacts for N-type SiC
    Machac, Petr
    Barda, Bohumil
    2009 32ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, 2009, : 115 - 118
  • [9] INVESTIGATION OF PHOTON CAPTURE CROSS-SECTIONS OF THERMAL-DEFECT LEVELS IN N-TYPE SI
    KAPITONOVA, LM
    KOSTINA, LS
    LEBEDEV, AA
    MAKHKAMOV, S
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 766 - 767
  • [10] INFLUENCE OF OXYGEN ON THE FORMATION OF ACCEPTOR LEVELS OF NICKEL IN N-TYPE SI
    VITMAN, RF
    GUSEVA, NB
    LEBEDEV, AA
    TAPTYGOV, ES
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 579 - 580