共 50 条
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- [2] INVESTIGATION OF THE FUNDAMENTAL PARAMETERS GOVERNING THE PHONON-PHONON RELAXATION IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (02): : 231 - 233
- [3] INVESTIGATION OF CLUSTERS OF COMPENSATING CENTERS IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1278 - 1280
- [4] CHARACTERIZATION OF DEEP LEVELS IN N-TYPE SI EPITAXIAL LAYER JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10A): : L1245 - L1247
- [5] Characterization of deep levels in n-type Si epitaxial layer Japanese Journal of Applied Physics, Part 2: Letters, 1995, 34 (10 A):
- [6] Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (5B): : 3376 - 3378
- [7] Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals Sato, S. (sato@pem.miyazaki-u.ac.jp), 1600, Japan Society of Applied Physics (41): : 3376 - 3378
- [8] Effects of Si Interlayer on Nickel and Platinum Ohmic Contacts for N-type SiC 2009 32ND INTERNATIONAL SPRING SEMINAR ON ELECTRONICS TECHNOLOGY, 2009, : 115 - 118
- [9] INVESTIGATION OF PHOTON CAPTURE CROSS-SECTIONS OF THERMAL-DEFECT LEVELS IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 766 - 767
- [10] INFLUENCE OF OXYGEN ON THE FORMATION OF ACCEPTOR LEVELS OF NICKEL IN N-TYPE SI SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 579 - 580