STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS

被引：55

作者：

DASSARMA, S ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF, DEPT PHYS, LOS ANGELES, CA 90007 USA

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.24.2051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2051 / 2068

页数：18

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