STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS

被引：55
作者：
DASSARMA, S [1 ]
MADHUKAR, A [1 ]
机构：
[1] UNIV SO CALIF, DEPT PHYS, LOS ANGELES, CA 90007 USA
来源：
PHYSICAL REVIEW B | 1981年 / 24卷 / 04期
关键词：
D O I：
10.1103/PhysRevB.24.2051
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2051 / 2068
页数：18
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