QUANTITATIVE IMAGING OF LOCAL DEFECTS IN VERY THIN SILICON DIOXIDE FILMS AT LOW-BIAS VOLTAGE BY TRUE OXIDE ELECTRON-BEAM-INDUCED CURRENT

被引：10

作者：

LAU, WS ^{[1
]}

CHAN, DSH ^{[1
]}

PHANG, JCH ^{[1
]}

CHOW, KW ^{[1
]}

PEY, KS ^{[1
]}

LIM, YP ^{[1
]}

SANE, V ^{[1
]}

CRONQUIST, B ^{[1
]}

机构：

[1] CHARTERED SEMICOND MFG PTE LTD,SINGAPORE 0511,SINGAPORE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 02期

关键词：

D O I：

10.1063/1.358994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new low-voltage contrast mechanism due to electron-hole pairs generated in the oxide by an electron beam was observed at electric fields lower than 3.5 MV/cm. This is in addition to the tunneling current microscopy (TCM) contrast mechanism observed at electric fields higher than 3.5 MV/cm. The new contrast mechanism is opposite in sign to the TCM contrast mechanism such that the image of a local thinning defect in the oxide is dark at low bias voltage and bright at higher bias voltage. Good contrast can be obtained at electric field as low as 2.4 MV/cm. Applications include large area imaging of oxide defects and quantitative mapping of small oxide thickness variations. © 1995 American Institute of Physics.

引用

页码：739 / 746

页数：8

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