A COMPARATIVE-STUDY OF METHODS OF MEASURING CARRIER LIFETIME IN P-I-N DEVICES

被引：14

作者：

DERDOURI, M ^{[1
]}

LETURCQ, P ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

机构：

[1] INST NATL SCI APPL LYON,F-31077 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期

关键词：

D O I：

10.1109/T-ED.1980.20155

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2097 / 2101

页数：5

共 12 条

[1] STEP RECOVERY OF P-I-N-DIODES [J].

BERZ, F .

SOLID-STATE ELECTRONICS, 1979, 22 (11) :927-932

[2] MEASUREMENT OF DEEP-LEVEL SPATIAL DISTRIBUTIONS [J].

BROTHERTON, SD .

SOLID-STATE ELECTRONICS, 1976, 19 (04) :341-342

[3]

DERDOURI M, 1978, THESIS U P SABATIER

[4] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[5] CORRELATIONS BETWEEN REVERSE RECOVERY TIME AND LIFETIME OF P-N JUNCTION DRIVEN BY A CURRENT RAMP [J].

KAO, YC ;

DAVIS, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (09) :652-&

[6] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J].

KUNO, HJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) :8-&

[7]

Moll J. L., 1962, P IRE, V50, P43

[8]

MUNOZYAGUE A, 1978, IEEE T ELECTRON DEV, V25, P42, DOI 10.1109/T-ED.1978.19029

[9]

MUNOZYAGUE A, 1978, MAY POW SEM DEV M

[10]

MUNOZYAGUE A, 1977, THESIS U P SABATIER

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