COMPARATIVE-STUDY OF THE SBGA HETEROANTISITE AND OFF-CENTER O(AS) IN GAAS

被引：2

作者：

BOHL, B

KUNZER, M

FUCHS, F

HENDORFER, G

KAUFMANN, U

机构：

[1] Fraunhofer Institut für Angewandte Festkörperphysik, 7800 Freiburg

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.46.10450

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The (0/+) donor level of the Sb(Ga) heteroantisite and the off-center O(As)-induced EL3 level in GaAs have very similar thermal emission rates for electrons and are therefore difficult to distinguish by deep-level transient spectroscopy (DLTS). It is shown that a reliable DLTS assessment of the Sb(Ga) level is nevertheless possible if additional quantitative information about Sb(Ga) and EL3 is obtained from magnetic resonance and local vibrational mode spectroscopy, respectively.

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页码：10450 / 10452

页数：3

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