ELECTRONIC-STRUCTURE OF THE RECONSTRUCTED INP(100) SURFACE

被引:6
|
作者
CHAN, BC
ONG, CK
机构
关键词
SURFACE STATES; SEMICONDUCTOR SURFACE; INP;
D O I
10.1016/0022-3697(91)90170-5
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The Chadi total energy algorithm was extended to perform tight binding calculations on the InP(100) surface. The tight binding parameters for the In-P interactions were determined in the usual way and those for the In-In interactions obtained from the Harrison universal parameter scheme. From considerations of the total energy, we found that 2 x 2A and 4 x 2 asymmetrical dimer structures are equally probable. However, from the comparison of the position of filled and unfilled surface states with the experimental value, we conclude that the 4 x 2 structure could be the optimum dimerized structure on the InP(100) surface.
引用
收藏
页码:699 / 703
页数:5
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