OBSERVATION OF A NOVEL RELAXATION PROCESS ASSOCIATED WITH ELECTRONIC-TRANSITIONS FROM DEEP (D) DEFECTS IN HYDROGENATED AMORPHOUS-SILICON

被引：46

作者：

COHEN, JD

LEEN, TM

RASMUSSEN, RJ

机构：

[1] Department of Physics, University of Oregon, Eugene

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 23期

关键词：

D O I：

10.1103/PhysRevLett.69.3358

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Junction capacitance transient measurements were employed to study the thermal emission of electrons trapped in deep (D) defects in lightly n-doped a-Si:H samples. We conclude that a novel defect relaxation process occurs upon a change of charge state of the defect such that an electron's thermal release rate is inversely proportional to its residence time in the defect. Supplemental spin transient measurements indicate that both D-/D0 and D0/D+ transitions must be involved. A good fit to our data is obtained if we assume a non-Markovian process for the D0/D+ transition.

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页码：3358 / 3361

页数：4

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