TUNNELING IN HIGH-TC SUPERCONDUCTOR SEMICONDUCTOR HETEROSTRUCTURE FORMED ON NB-DOPED SRTIO3

被引：5
|
作者：
YOSHIDA, A [1 ]
TAMURA, H [1 ]
GOTOH, K [1 ]
FUJIMAKI, N [1 ]
HASUO, S [1 ]
CHIN, DK [1 ]
VANDUZER, T [1 ]
机构：
[1] UNIV CALIF BERKELEY,BERKELEY,CA 94720
来源：
PHYSICA B | 1991年 / 169卷 / 1-4期
关键词：
D O I：
10.1016/0921-4526(91)90275-J
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Superconductor/semiconductor tunnel junctions were fabricated by depositing BaYCuO films on Nb-doped SrTiO3 substrates. Capacitance measurements on Au/ and BaYCuO/Nb-doped SrTiO3 diode showed that low-dielectric-constant surface layers formed on the SrTiO3. The surface layer acted as tunnel barrier in the BaYCuO/Nb-doped SrTiO3 diode, and the diode exhibited asymmetric conductance versus voltage characteristics caused by tunneling between the superconductor and the conduction band of SrTiO3.
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收藏
页码：459 / 460
页数：2
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