Schottky Diode Graphene Based Sensors

被引：0

作者：

Ashour, A. ^{[1
]}

Saqr, M. ^{[1
]}

AbdelKarim, M. ^{[1
]}

Gamal, A. ^{[1
]}

Sharaf, A. ^{[1
]}

Serry, M. ^{[2
]}

机构：

[1] Amer Univ Cairo, YJ Sci & Technol Res Ctr, New Cairo, Egypt

[2] Amer Univ Cairo, Dept Mech Engn, New Cairo, Egypt

来源：

INTERNATIONAL JOURNAL ON SMART SENSING AND INTELLIGENT SYSTEMS | 2014年 / 7卷 / 05期

关键词：

graphene oxide; graphene; shottcky diode; radiation sensor; glucose sensing;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we aim to demonstrate a novel scheme for integration of nanostructured semiconductor Graphene Oxide (GO) shottky diodes on flexible substrate for a wide range of sensing applications. The platform introduces a novel flexible GO/Pt/n-Si and GO/Pt/SiN composite structures which provides excellent optical and electrical properties, while maintaining an acceptable mechanical, biocompatibility, and return loss performance. The new structure was investigated for glucose, radiation, and infrared sensing. The sensors results showed ultrahigh sensitivity and high linearity in the targeted regions of interest. Moreover, the use of nanostructured materials allows for the development of a new generation of modern printed circuit antennas and will enable wide range of applications merging both technologies for a wide range of wearable and implantable sensing devices.

引用

页数：4

共 7 条

[1]

International Atomic Energy Agency, 2011, NUCL SECUR REP NUCL SECUR REP

[2] Micromachined infrared detectors based on pyroelectric thin films [J].