NUMERICAL-ANALYSIS OF MOCVD REACTOR DESIGN

MOCVD (metal-organic chemical vapor, deposition) is an excellent method for making epitaxial thin layers of compound semiconductors. However, it is very difficult to obtain an epitaxial layer with uniform thickness in a wide area of an MOCVD reactor. Numerical analysis of an MOCVD reactor was performed, using a two-dimensional model which considers thermal conduction and convection, and the diffusion and cracking of metal-organic gas. This model suggests that a modulated profile of metal-organic gas concentration or addition of gas-supplying ports on a reactor makes it possible to obtain larger and more uniform epitaxial layers. © 1990, The Society of Chemical Engineers, Japan. All rights reserved.