NUMERICAL-ANALYSIS OF MOCVD REACTOR DESIGN

被引:1
作者
SUZUKI, M
MINAMIYAMA, M
机构
[1] Inst. of Ind. Sci., Univ. of Tokyo
[2] Public Works Research Institute, Ministry of Construction
关键词
Chemical Reactor; GaAs layer; MOCVD; Numerical Analysis; Reactor Design; Transport Phenomena;
D O I
10.1252/kakoronbunshu.16.588
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
MOCVD (metal-organic chemical vapor, deposition) is an excellent method for making epitaxial thin layers of compound semiconductors. However, it is very difficult to obtain an epitaxial layer with uniform thickness in a wide area of an MOCVD reactor. Numerical analysis of an MOCVD reactor was performed, using a two-dimensional model which considers thermal conduction and convection, and the diffusion and cracking of metal-organic gas. This model suggests that a modulated profile of metal-organic gas concentration or addition of gas-supplying ports on a reactor makes it possible to obtain larger and more uniform epitaxial layers. © 1990, The Society of Chemical Engineers, Japan. All rights reserved.
引用
收藏
页码:588 / 596
页数:9
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