TUNGSTEN ETCHING MECHANISMS IN CF4/O-2 REACTIVE ION ETCHING PLASMAS

被引：29

作者：

BESTWICK, TD

OEHRLEIN, GS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 10期

关键词：

D O I：

10.1063/1.343776

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5034 / 5038

页数：5

共 13 条

[1] A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY [J].

AHN, KY .

THIN SOLID FILMS, 1987, 153 :469-478

[2]

AHN KY, 1986, 1985 P WORKSH TUNGST, P239

[3] ETCHING OF TUNGSTEN WITH XEF2 - AN X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY [J].

BENSAOULA, A ;

GROSSMAN, E ;

IGNATIEV, A .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4587-4590

[4] SELECTIVE DRY ETCHING OF TUNGSTEN FOR VLSI METALLIZATION [J].

BURBA, ME ;

DEGENKOLB, E ;

HENCK, S ;

TABASKY, M ;

JUNGBLUTH, ED ;

WILSON, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (10) :2113-2118

[5] PLASMA-ASSISTED ETCHING OF TUNGSTEN FILMS - A QUARTZ-CRYSTAL MICROBALANCE STUDY [J].

FRACASSI, F ;

COBURN, JW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1758-1761

[6]

HESS DW, 1988, SOLID STATE TECHNOL, V31

[7] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J].

MOGAB, CJ ;

ADAMS, AC ;

FLAMM, DL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3796-3803

[8] SILICON ETCHING MECHANISMS IN A CF4/H2 GLOW-DISCHARGE [J].

OEHRLEIN, GS ;

WILLIAMS, HL .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :662-672

[9] COMPETITIVE REACTIONS OF FLUORINE AND OXYGEN WITH W, WSI2, AND SI SURFACES IN REACTIVE ION ETCHING USING CF4/O2 [J].

OEHRLEIN, GS ;

LINDSTOM, JL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :1035-1041

[10] SURFACE PROCESSES IN CF4/O2 REACTIVE ETCHING OF SILICON [J].

OEHRLEIN, GS ;

ROBEY, SW ;

LINDSTROM, JL .

APPLIED PHYSICS LETTERS, 1988, 52 (14) :1170-1172

← 1 2 →