SECONDARY-ELECTRON DETECTION IN THE SCANNING ELECTRON-MICROSCOPE

被引:5
作者
BALASUBRAMANYAM, M
MUNRO, E
TAYLOR, J
机构
[1] MUNROS ELECTRON BEAM SOFTWARE LTD,LONDON SW7 4AN,ENGLAND
[2] LEICA CAMBRIDGE,CAMBRIDGE CB1 3QH,ENGLAND
关键词
D O I
10.1016/0168-9002(95)00371-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A method of image simulation in the Scanning Electron Microscope (SEM) has been developed which takes into account image formation processes from the point of impact of the primary beam on the sample to the point of electron collection by the detector. Since the interactions of electrons within the sample have previously been reported in detail (M. Balasubramanyam et al., SPIE Proc. 2014 (1993) 104), this paper concentrates on the 3D simulation of the paths of the secondary electrons once they leave the sample surface. The computer modelling allows the collection characteristics of secondary electron detectors to be investigated, and examples of simulated images are shown. The techniques described can be used to improve the design of detectors for the SEM.
引用
收藏
页码:270 / 275
页数:6
相关论文
共 8 条
[1]  
BALASUBRAMANYAM M, 1993, SPIE P, V2014, P104
[2]  
BRADLEY GF, 1991, 49TH P ANN EMSA M, P534
[3]  
JOY DC, 1988, I PHYSICS C SER, V93
[4]  
JOY DC, 1989, IMAGE SIMULATION HIG
[5]  
KATO M, 1988, JPN J APPL PHYS, V27
[6]  
KOTERA M, 1990, JPN J APPL PHYS, V29
[7]  
KUNI A, 1980, 1980 P MICR MEAS TEC
[8]  
ROUSE J, 1994, ADV OPTICAL ELECT MI, V13, P1, DOI DOI 10.1116/1.584687