EFFECT OF HCL AND CL2 ON THERMAL OXIDATION OF SILICON

被引：148

作者：

KRIEGLER, RJ

CHENG, YC

COLTON, DR

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1972年 / 119卷 / 03期

关键词：

D O I：

10.1149/1.2404208

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：388 / &

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