AMPLIFIED SPONTANEOUS EMISSION AND GAIN CHARACTERISTICS OF FABRY-PEROT AND TRAVELING WAVE TYPE SEMICONDUCTOR-LASER AMPLIFIERS

被引：25
作者：
THYLEN, L
机构：
[1] Univ of California, Berkeley, CA,, USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1988年 / 24卷 / 08期
关键词：
D O I：
10.1109/3.7080
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
13
引用
收藏
页码：1532 / 1537
页数：6
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