LOW-TEMPERATURE ANNEALING OF AS-IMPLANTED GE

被引：9

作者：

HATTANGADY, SV ^{[1
]}

FOUNTAIN, GG ^{[1
]}

NICOLLIAN, EH ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.340464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 74

页数：7

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[37] EFFECT OF LOW-TEMPERATURE PREANNEAL AND HIGH-TEMPERATURE RAPID THERMAL ANNEALING OF ARSENIC-IMPLANTED SILICON [J].

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