LOW-TEMPERATURE ANNEALING OF AS-IMPLANTED GE

被引：9
|
作者：
HATTANGADY, SV [1 ]
FOUNTAIN, GG [1 ]
NICOLLIAN, EH [1 ]
MARKUNAS, RJ [1 ]
机构：
[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223
来源：
JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期
关键词：
D O I：
10.1063/1.340464
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：68 / 74
页数：7
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