LOW-TEMPERATURE ANNEALING OF AS-IMPLANTED GE

被引：9

作者：

HATTANGADY, SV ^{[1
]}

FOUNTAIN, GG ^{[1
]}

NICOLLIAN, EH ^{[1
]}

MARKUNAS, RJ ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT ELECT ENGN,CHARLOTTE,NC 28223

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 01期

关键词：

D O I：

10.1063/1.340464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：68 / 74

页数：7

共 50 条

[1] SHALLOW JUNCTION FORMATION IN AS-IMPLANTED SI BY LOW-TEMPERATURE RAPID THERMAL ANNEALING
ELGHOR, MK
PENNYCOOK, SJ
ZUHR, RA
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 19 - 25
[2] LOW-TEMPERATURE ANNEALING STUDIES IN GE
MACKAY, JW
KLONTZ, EE
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1269 - 1274
[3] LOW-TEMPERATURE ANNEALING BEHAVIOR OF GAAS IMPLANTED WITH BE
ANDERSON, CL
DUNLAP, HL
APPLIED PHYSICS LETTERS, 1979, 35 (02) : 178 - 180
[4] LOW-TEMPERATURE ANNEALING OF BE-IMPLANTED GAAS
KWUN, SI
HONG, CH
SPITZER, WG
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3125 - 3128
[5] HEAT-CAPACITY OF LOW-TEMPERATURE GE-CALORIMETERS AND SI-CALORIMETERS AND OPTIMIZATION OF AS-IMPLANTED SILICON THERMISTORS
ALESSANDRELLO, A
CAMIN, DV
CEROFOLINI, GF
FIORINI, E
GIULIANI, A
LIGUORI, C
MEDA, L
NIINIKOSKI, TO
RIJLLART, A
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1988, 263 (01) : 233 - 236
[6] Room temperature annealing of low-temperature ion implanted sapphire
Schnohr, C. S.
Wendler, E.
Wesch, W.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 : 492 - 495
[7] LOW-TEMPERATURE THERMAL ANNEALING OF ARSENIC IMPLANTED SILICON
SCOVELL, PD
YOUNG, JM
ELECTRONICS LETTERS, 1980, 16 (16) : 614 - 615
[8] LOW-TEMPERATURE ANNEALING CHARACTERISTICS OF PHOSPHORUS-IMPLANTED SILICON
MIYAO, M
NATSUAKI, N
YOSHIHIRO, N
TAMURA, M
TOKUYAMA, T
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 : 57 - 62
[9] LOW-TEMPERATURE ANNEALING OF SHALLOW ARSENIC-IMPLANTED LAYERS
YOUNG, ND
CLEGG, JB
MAYDELLONDRUSZ, EA
JOURNAL OF APPLIED PHYSICS, 1987, 61 (06) : 2189 - 2194
[10] LOW-TEMPERATURE ANNEALING OF PREDAMAGED, ION IMPLANTED LAYERS IN SI
CROWDER, BL
MOREHEAD, FF
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (08) : C298 - &

← 1 2 3 4 5 →