THEORY OF HYDROGEN PASSIVATION OF SHALLOW-LEVEL DOPANTS IN CRYSTALLINE SILICON

被引：181

作者：

CHANG, KJ

CHADI, DJ

机构：

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.60.1422

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1422 / 1425

页数：4

共 27 条

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