PARAMETERS AFFECTING SENSITIVITY OF POLY(METHYL METHACRYLATE) AS A POSITIVE LITHOGRAPHIC RESIST

被引:22
作者
GIPSTEIN, E [1 ]
OUANO, AC [1 ]
JOHNSON, DE [1 ]
NEED, OU [1 ]
机构
[1] IBM CORP,RES LAB,SAN JOSE,CA 95193
关键词
D O I
10.1002/pen.760170613
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
引用
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页码:396 / 401
页数:6
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