INTERNAL-FRICTION IN FREESTANDING THIN AL FILMS

被引：14
|
作者：
HEINEN, D
BOHN, HG
SCHILLING, W
机构：
[1] Institut für Festkörperforschung, Forschungszentrum Jülich GmbH
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 02期
关键词：
D O I：
10.1063/1.360279
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The internal friction of a 4 μm thick free-standing Al film has been investigated. For a measuring frequency of about 200 Hz a relaxation peak was found near 100°C. Compared with a substrate-bonded film having the same columnar microstructure the peak is about three times higher while the temperature position is the same. This result confirms a model derived for substrate-bonded films which predicts that intrinsic grain boundary sliding controls the relaxation mechanism. The film/substrate-bonding only influences the peak height. It partly hinders the grain boundary sliding thereby reducing the relaxation strength. © 1995 American Institute of Physics.
引用
收藏
页码：893 / 896
页数：4
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