TRANSIENT ELECTROLUMINESCENCE OF MONOLAYER AND BILAYER SEXITHIOPHENE DIODES

被引：33
作者：
DELANNOY, P
HOROWITZ, G
BOUCHRIHA, H
DELOFFRE, F
FAVE, JL
GARNIER, F
HAJLAOUI, R
HEYMAN, M
KOUKI, F
MONGE, JL
VALAT, P
WINTGENS, V
YASSAR, A
机构：
[1] UNIV PARIS 07,CNRS,URA 17,F-75251 PARIS 05,FRANCE
[2] CNRS,MAT MOLEC LAB,F-94320 THIAIS,FRANCE
[3] SCHNEIDER ELECT,DIRECT RECH & DEV,F-92000 NANTERRE,FRANCE
[4] FAC SCI TUNIS,PHYS MAT CONDENSEE LAB,TUNIS 1060,TUNISIA
来源：
SYNTHETIC METALS | 1994年 / 67卷 / 1-3期
关键词：
ELECTROLUMINESCENCE; DIODES; SEXITHIOPHENE;
D O I：
10.1016/0379-6779(94)90040-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The transient electroluminescence of monolayer and bilayer sexithiophene-based diodes has been measured. The delay time of the luminescence onset of the monolayer diode corresponds to a hole mobility of 5 x 10(-6) cm(2) V-1 s(-1) which is considerably lower than that obtained by field-effect measurements. This is interpreted in terms of strong transient trapping. The bilayer diode presents a twofold time-resolved response which is attributed to the different mobility of its constituent layers.
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页码：197 / 200
页数：4
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