STRONG VOLTAGE-DEPENDENT INWARD RECTIFICATION OF INWARD RECTIFIER K+ CHANNELS IS CAUSED BY INTRACELLULAR SPERMINE

被引：313

作者：

FAKLER, B ^{[1
]}

BRANDLE, U ^{[1
]}

GLOWATZKI, E ^{[1
]}

WEIDEMANN, S ^{[1
]}

ZENNER, HP ^{[1
]}

RUPPERSBERG, JP ^{[1
]}

机构：

[1] UNIV TUBINGEN HOSP, EAR NOSE & THROAT CLIN, DEPT SENSORY BIOPHYS, D-72076 TUBINGEN, GERMANY

来源：

CELL | 1995年 / 80卷 / 01期

关键词：

D O I：

10.1016/0092-8674(95)90459-X

中图分类号：

Q5 [生物化学]; Q7 [分子生物学];

学科分类号：

071010 ; 081704 ;

摘要：

Inward rectifier K+ channels mediate the K+ conductance at resting potential in many types of cell. Since these K+ channels do not pass outward currents (inward rectification) when the cell membrane is depolarized beyond a trigger threshold, they play an important role in controlling excitability. Both a highly voltage-dependent block by intracellular Mg2+ and an endogenous gating process are presently assumed to underly inward rectification. It is shown that strong voltage dependence of rectification found under physiological conditions is predominantly due to the effect of intracellular spermine. Physiological concentrations of free spermine mediate strong rectification of IRK1 inward rectifier K+ channels even in the absence of free Mg2+ and in IRK1 mutant channels that have no endogenous rectification.

引用

页码：149 / 154

页数：6

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