FABRICATION OF QUANTUM WIRES AND DOTS BY MOCVD SELECTIVE GROWTH

被引：51

作者：

ARAKAWA, Y

机构：

[1] Institute of Industrial Science, University of Tokyo, Minato-ku, Tokyo, 153

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90238-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss fabrication of GaAs quantum wires and quantum dots using an in situ MOCVD selective growth technique on SiO2 patterned substrates, including the optical properties of those nano-structures. As for the GaAs quantum wires, triangular-shaped GaAs quantum wires with a lateral width less than 10 nm were obtained. The photoluminescence (PL) and magneto-PL measurements clearly demonstrate the existence of the quantum wire effects in the structures. In addition, InGaAs strained quantum wires were also fabricated. Using a similar but slightly different selective growth technique, GaAs dots with a dimension of 25 x 25 x 12 nm surrounded by AlGaAs regions were prepared.

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页码：523 / 528

页数：6

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