LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF TAB2

被引：14

作者：

RANDICH, E

机构：

来源：

THIN SOLID FILMS | 1980年 / 72卷 / 03期

关键词：

CHEMICAL VAPOR DEPOSITION - TANTALUM DIBORIDE;

D O I：

10.1016/0040-6090(80)90541-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Crystalline TaB//2 was deposited using the chemical vapor deposition reaction of TaCl//5 and B//2H//6 in the temperature range 773-1200 K. Thermodynamic calculations were made which compared the use of both B//2H//6 and BCl//3 as boron source gases. The microhardness of the coatings decreased with increasing atomic ratio of boron to tantalum and decreasing crystal size.

引用

页码：517 / 522

页数：6

共 12 条

[1]

[Anonymous], 1966, J ELECTROCHEM SOC

[2] CHEMICAL VAPOR-DEPOSITION OF NBB2 AND TAB2 THROUGH HEATING BY CONCENTRATION OF SOLAR-RADIATION [J].