AUGER RECOMBINATION IN LOW-DIMENSIONAL STRUCTURES

被引:19
作者
ABRAM, RA
KELSALL, RW
TAYLOR, RI
机构
关键词
D O I
10.1016/0022-3697(88)90191-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
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页码:607 / 613
页数:7
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共 20 条
[1]   BAND-STRUCTURE ENGINEERING FOR LOW-THRESHOLD HIGH-EFFICIENCY SEMICONDUCTOR-LASERS [J].
ADAMS, AR .
ELECTRONICS LETTERS, 1986, 22 (05) :249-250
[2]   QUANTUM-WELL LASERS GAIN, SPECTRA, DYNAMICS [J].
ARAKAWA, Y ;
YARIV, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1887-1899
[3]   MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].
ARAKAWA, Y ;
SAKAKI, H .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941
[4]   AUGER EFFECT IN SEMICONDUCTORS [J].
BEATTIE, AR ;
LANDSBERG, PT .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29
[5]  
BRAND S, 1985, 17TH P INT C PHYS SE, P1013
[6]   OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT-BANDGAP SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY-HOLE BANDS IN GAAS AND INP [J].
BURT, MG ;
BRAND, S ;
SMITH, C ;
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6385-6401
[7]   CALCULATION OF THE ZERO-TEMPERATURE AUGER RECOMBINATION RATE IN THE QUATERNARY SEMICONDUCTOR ALLOY GAALASSB [J].
BURT, MG .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (22) :3269-3278
[8]  
Haug A., 1972, THEORETICAL SOLID ST, V2
[9]   THE PHYSICS OF QUANTUM-WELL STRUCTURES [J].
KELLY, MJ ;
NICHOLAS, RJ .
REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (12) :1699-1741
[10]   RECOMBINATION COEFFICIENTS IN LOW-DIMENSIONAL SYSTEMS, WITH SPECIAL REFERENCE TO LONG-WAVELENGTH QUATERNARY LASERS [J].
LANDSBERG, PT ;
ADAMS, MJ .
IEE PROCEEDINGS-J OPTOELECTRONICS, 1986, 133 (02) :118-120