LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION

被引：38
作者：
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期
关键词：
D O I：
10.1109/T-ED.1978.19141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：587 / 596
页数：10
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