LOW-NOISE GAAS FETS PREPARED BY ION-IMPLANTATION

被引:38
作者
HIGGINS, JA
KUVAS, RL
EISEN, FH
CHEN, DR
机构
关键词
D O I
10.1109/T-ED.1978.19141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:587 / 596
页数:10
相关论文
共 24 条
[1]  
BARRERA J, 1975, 5TH P BIENN CORN EL, P135
[2]  
CHEN DR, 1976 INT SOL STAT CI, P160
[3]  
COX HM, 1977, 6TH P INT S GAAS REL, P11
[4]  
EISEN FH, 1977, ION IMPLANTATION SEM
[5]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[6]   PERFORMANCE OF SULFUR-ION-IMPLANTED GAAS FETS [J].
HIGGINS, JA ;
WELCH, BM ;
EISEN, FH ;
ROBINSON, GD .
ELECTRONICS LETTERS, 1976, 12 (01) :17-18
[7]   2-DIMENSIONAL PARTICLE MODELS IN SEMICONDUCTOR-DEVICE ANALYSIS [J].
HOCKNEY, RW ;
WARRINER, RA ;
REISER, M .
ELECTRONICS LETTERS, 1974, 10 (23) :484-486
[8]  
HOOPER WW, 1977 TECH DIG INT EL, P601
[9]  
KELLNER W, 1976 TECH DIG INT EL, P238
[10]   COMPUTER AIDED 2-DIMENSIONAL ANALYSIS OF JUNCTION FIELD-EFFECT TRANSISTOR [J].
KENNEDY, DP ;
OBRIEN, RR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :95-&