SCATTERING MECHANISMS IN INVERSION CHANNELS OF MIS STRUCTURES ON SILICON

被引:29
作者
GUZEV, AA [1 ]
KURISHEV, GL [1 ]
SINITSA, SP [1 ]
机构
[1] ACAD SCI USSR,INST SEMICONDUCTOR PHYS,SIBIRIAN BRANCH,NOVOSIBIRSK,USSR
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1972年 / 14卷 / 01期
关键词
D O I
10.1002/pssa.2210140103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:41 / 50
页数:10
相关论文
共 23 条
[1]  
Chaplik A. V., 1971, Zhurnal Eksperimental'noi i Teoreticheskoi Fiziki, V60, P1845
[2]  
DEMICHOVSKII VY, 1968, USPEKHI FIZ NAUK, V96, P61
[3]  
DEMIKHOVSKII VY, 1964, FIZ TVERD TELA, V6, P960
[4]  
Dobrovol'skii V. N., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P723
[5]   SCATTERING OF HOLES OF A 2-DIMENSIONAL GAS NEAR GERMANIUM SURFACES CLEAVED IN LIQUID NITROGEN [J].
DOBROVOLSKII, VN ;
ZHARKIKH, YS .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 6 (02) :655-+
[6]   ELECTRON MOBILITY IN A SEMICONDUCTOR INVERSION LAYER - POSSIBLE CONTRIBUTION FROM BULK PHONONS [J].
EZAWA, H ;
KAWAJI, S ;
KURODA, T ;
NAKAMURA, K .
SURFACE SCIENCE, 1971, 24 (02) :659-&
[7]   NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J].
FANG, FF ;
HOWARD, WE .
PHYSICAL REVIEW LETTERS, 1966, 16 (18) :797-&
[8]   TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].
FANG, FF ;
FOWLER, AB .
PHYSICAL REVIEW, 1968, 169 (03) :619-+
[9]  
Guzev A. A., 1970, Fizika i Tekhnika Poluprovodnikov, V4, P2043
[10]  
GUZEV AA, 1971, KONFERENTSII VOPROSA