OBSERVATION OF COULOMB-BLOCKADE OSCILLATIONS BY THE BACK GATE WITH SUBATTOFARAD MUTUAL CAPACITANCE

被引：22

作者：

NAKATA, S

机构：

[1] NTT Basic Research Laboratories, Musashino-shi

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.47.1679

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A quantum dot is formed in AlxGa1-xAs/GaAs using the split-gate method. First the characteristics of the point contact, which determine the electron transport in the quantum dot, are investigated. Quantized conductance peculiar to the one-dimensional subband is observed. Next the transport properties of the quantum dot are studied by changing the voltage of the back gate, which is placed about 360 mum from the dot. Coulomb-blockade oscillations are observed before the current is completely pinched off. The charging energy of the dot is estimated to be about 0.6 meV based on the temperature dependence and source-drain voltage dependence of the oscillations. It is clarified experimentally that only the mutual capacitance between the back gate and the dot determines the oscillation period.

引用

页码：1679 / 1682

页数：4

共 15 条

[1]

Averin D. V., 1991, MESOSCOPIC PHENOMENA

[2] THEORY OF COULOMB-BLOCKADE OSCILLATIONS IN THE CONDUCTANCE OF A QUANTUM DOT [J].

BEENAKKER, CWJ .

PHYSICAL REVIEW B, 1991, 44 (04) :1646-1656

[3]

HEINRICH H, 1988, SPRINGER SERIES SOLI, V83

[4] MAGNETOCONDUCTANCE OSCILLATIONS OF A QUASI-ONE-DIMENSIONAL ELECTRON-GAS IN A PARABOLIC TRANSVERSE POTENTIAL [J].

KAPLAN, SB ;

WARREN, AC .

PHYSICAL REVIEW B, 1986, 34 (02) :1346-1348

[5] QUANTIZED CURRENT IN A QUANTUM-DOT TURNSTILE USING OSCILLATING TUNNEL BARRIERS [J].

KOUWENHOVEN, LP ;

JOHNSON, AT ;

VANDERVAART, NC ;

HARMANS, CJPM ;

FOXON, CT .

PHYSICAL REVIEW LETTERS, 1991, 67 (12) :1626-1629

[6]

KOUWENHOVEN LP, IN PRESS ADV SOLID S

[7] CORRELATED DISCRETE TRANSFER OF SINGLE ELECTRONS IN ULTRASMALL TUNNEL-JUNCTIONS [J].

LIKHAREV, KK .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1988, 32 (01) :144-158

[8] TRANSPORT THROUGH A STRONGLY INTERACTING ELECTRON-SYSTEM - THEORY OF PERIODIC CONDUCTANCE OSCILLATIONS [J].

MEIR, Y ;

WINGREEN, NS ;

LEE, PA .

PHYSICAL REVIEW LETTERS, 1991, 66 (23) :3048-3051

[9] SINGLE-ELECTRON CHARGING AND PERIODIC CONDUCTANCE RESONANCES IN GAAS NANOSTRUCTURES [J].

MEIRAV, U ;

KASTNER, MA ;

WIND, SJ .

PHYSICAL REVIEW LETTERS, 1990, 65 (06) :771-774

[10] OBSERVATION OF TUNNELING PHENOMENA AND THE CHARGING EFFECT THROUGH SMALL CONSTRICTED REGIONS IN SEMICONDUCTORS FABRICATED WITH A FOCUSED ION-BEAM AT 4.2-K [J].

NAKATA, S .

PHYSICAL REVIEW B, 1992, 46 (20) :13326-13330

← 1 2 →