HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF PHASE-TRANSITIONS AND RECONSTRUCTION ON A VICINAL SI(111) SURFACE

被引：68
作者：
HIBINO, H
FUKUDA, T
SUZUKI, M
HOMMA, Y
SATO, T
IWATSUKI, M
MIKI, K
TOKUMOTO, H
机构：
[1] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LABS, MUSASHINO, TOKYO 180, JAPAN
[2] JOEL LTD, AKISHIMA, TOKYO 196, JAPAN
[3] ELECTROTECH LAB, TSUKUBA, IBARAKI 305, JAPAN
来源：
PHYSICAL REVIEW B | 1993年 / 47卷 / 19期
关键词：
D O I：
10.1103/PhysRevB.47.13027
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The step structure of a vicinal Si(111) surface misoriented 10-degrees to [112BAR] is studied using high-temperature scanning tunneling microscopy (STM). Phase transitions on the vicinal Si(111) surface are observed in real time on an atomic scale. During cooling from above the (1 X 1)-to-(7 X 7) transition temperature, slender (111) facets with a 7 X 7 structure appear, and these facets widen as the temperature decreases. At the initial stage of step bunching, no surface reconstruction is observed on the step bunch. Below 700-degrees-C, however, nucleation of reconstructed (331) facets starts on the step bunch. These STM results are compared with our previous reflection high-energy electron-diffraction results
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页码：13027 / 13030
页数：4
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