AN ENHANCEMENT-MODE MOS VOLTAGE-CONTROLLED LINEAR RESISTOR WITH LARGE DYNAMIC-RANGE

被引：44
|
作者：
MOON, G [1 ]
ZAGHLOUL, ME [1 ]
NEWCOMB, RW [1 ]
机构：
[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 1990年 / 37卷 / 10期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/31.103222
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is shown that the depletion-mode linear resistor of Babanezhad and Temes can be implemented in enhancement-mode devices. This allows a large increase in the dynamic range of the resistors. By inserting a bias source the linearity can also be improved. A layout and experimental results on the resulting IC are included. © 1990 IEEE
引用
收藏
页码：1284 / 1288
页数：5
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