AN ENHANCEMENT-MODE MOS VOLTAGE-CONTROLLED LINEAR RESISTOR WITH LARGE DYNAMIC-RANGE

被引：44

作者：

MOON, G ^{[1
]}

ZAGHLOUL, ME ^{[1
]}

NEWCOMB, RW ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS | 1990年 / 37卷 / 10期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/31.103222

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the depletion-mode linear resistor of Babanezhad and Temes can be implemented in enhancement-mode devices. This allows a large increase in the dynamic range of the resistors. By inserting a bias source the linearity can also be improved. A layout and experimental results on the resulting IC are included. © 1990 IEEE

引用

页码：1284 / 1288

页数：5

共 11 条

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