TISI2 FORMATION DURING ANNEALING OF SPUTTERED TI, TI TIN AND TINX THIN-FILMS

被引：1

作者：

PANJAN, P

NAVINSEK, B

ZABKAR, A

GODEC, M

KRIVOKAPIC, Z

ZALAR, A

PRACEK, B

机构：

[1] ISKRA MICROELECTR, YU-61000 LJUBLJANA, YUGOSLAVIA

[2] INST ELECTR & VACUUM TECH, YU-61000 LJUBLJANA, YUGOSLAVIA

来源：

VACUUM | 1990年 / 40卷 / 1-2期

关键词：

D O I：

10.1016/0042-207X(90)90147-Q

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Various structures of Ti, TiNx and TiN/Ti were deposited on silicon. The sheet resistance variation of the films was measured for a range of annealing temperature from 773 to 1123 K. Titanium silicide with a resistivity of less than 18 μΩ cm was obtained after annealing TiN/Ti/Si and TiN0.7/Si samples. AES depth profiling was used to monitor element redistribution after annealing. © 1990.

引用

页码：169 / 171

页数：3

共 6 条

[1] FORMATION OF TISI2 AND TIN DURING NITROGEN ANNEALING OF MAGNETRON SPUTTERED TI FILMS [J].