EXTRINSIC DOPING OF CDXHG1-XTE - A REVIEW

被引：9
作者：
CAPPER, P
机构：
来源：
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS | 1989年 / 19卷 / 04期
关键词：
D O I：
10.1016/0146-3535(89)90003-8
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：295 / 337
页数：43
相关论文
共 148 条
[1]   PHOTO-MOCVD GROWTH OF HGTE-CDTE SUPERLATTICES [J].
AHLGREN, WL ;
SMITH, EJ ;
JAMES, JB ;
JAMES, TW ;
RUTH, RP ;
PATTEN, EA ;
KNOX, RD ;
STAUDENMANN, JL .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :198-209
[2]  
AHLGREN WL, 1986, 3 IC MOVPE LOS ANG
[3]  
AMINGUAL D, 1986, SPIE, V659, P85
[4]  
ARAPOV YG, 1979, SOV PHYS SEMICOND+, V13, P409
[5]   LONG AND MIDDLE WAVELENGTH INFRARED PHOTODIODES FABRICATED WITH HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY [J].
ARIAS, JM ;
SHIN, SH ;
PASKO, JG ;
DEWAMES, RE ;
GERTNER, ER .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (04) :1747-1753
[6]   THE USE OF INSITU WASH MELTS IN THE LPE GROWTH OF (CDHG)TE [J].
ASTLES, M ;
BLACKMORE, G ;
STEWARD, V ;
RODWAY, DC ;
KIRTON, P .
JOURNAL OF CRYSTAL GROWTH, 1987, 80 (01) :1-8
[7]   THE SOURCES AND BEHAVIOR OF IMPURITIES IN LPE-GROWN (CD,HG)TE LAYERS ON CDTE(111) SUBSTRATES [J].
ASTLES, MG ;
HILL, H ;
BLACKMORE, G ;
COURTNEY, S ;
SHAW, N .
JOURNAL OF CRYSTAL GROWTH, 1988, 91 (1-2) :1-10
[8]   ARSENIC ION-IMPLANTATION IN HG1-XCDXTE [J].
BAARS, J ;
SEELEWIND, H ;
FRITZSCHE, C ;
KAISER, U ;
ZIEGLER, J .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :762-767
[9]   CW CO2 AND RUBY-LASER ANNEALING OF ION-IMPLANTED HG1-XCDXTE [J].
BAHIR, G ;
KALISH, R .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :730-732
[10]   ELECTRON-MOBILITY IN LPE HG1-XCDXTE/CDTE LAYERS NEAR ZERO BAND-GAP CROSSING [J].
BAJAJ, J ;
SHIN, SH ;
BOSTRUP, G ;
CHEUNG, DT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :244-246
12345678910